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While conducting experimental work to develop new semiconductors, PNNL scientists discovered a novel new compound—Cd3Ge2As4. The new material potentially has applications in infrared optics and electronics. This image is of a SEM backscatted electron detector micrograph and accompanying energy dispersive spectroscopic elemental dot map. The different colors are due to birefringence in the crystal caused by light traveling at different speeds along different crystallographic axes and show the spatial distribution of Cd (red), Ge (blue), and As (green). The image was captured by scientist Brad Johnson. The team of researchers on this project includes Brian Riley, Joe Ryan, John McCloy, Jarrod Crum, and SK Sundaram.

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Document Title: Cd3Ge2As4 Crystals
Category: Materials Science
Media Type: Photos
Date of Image/Photo: 10/29/2010
Background: Submitted during the 2010 Science as Art contest.
URL of this page: http://picturethis.pnl.gov/picturet.nsf/by+id/DRAE-8N9QD4

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